vishay bzx55..series document number 85604 rev. 2, 12-juni-03 vishay semiconductors www.vishay.com 1 94 9367 zener diodes features ? very sharp reverse characteristic low reverse current level very high stability low noise available with tighter tolerances applications voltage stabilization mechanical data case: do-35 glass case weight: approx. 130 mg packaging codes/options: tr / 10k per 13 " reel, 30k/box tap / 10k per ammopack (52 mm tape), 30k/box absolute maximum ratings t amb = 25 c, unless otherwise specified maximum thermal resistance t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit power dissipation l = 4 mm, t l = 25 c p v 500 mw z-current i z p v /v z ma junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c parameter test condition symbol value unit junction ambient l = 4 mm, t l = constant r thja 300 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 200 ma v f 1.5 v
www.vishay.com 2 document number 85604 rev. 2, 12-juni-03 vishay bzx55..series vishay semiconductors electrical characteristics bzx55c.. 1) tighter tolerances available on request: bzx55a... 1% of v znom , bzx55f... 3% of v znom partnumber zener voltage range 1) dynamic resistance test current temperature coefficient test current reverse leakage current v z @ i zt r zjt @ i zt , f = 1 khz r zjk @ i zk , f = 1 khz i zt tk vz i zk i r @ t amb = 25 c i r @ t amb = 150 c @ v r v ? ma %/k ma a v min max min max bzx55c2v4 2.28 2.56 < 85 < 600 5 -0.09 -0.06 1 < 50 < 100 1 bzx55c2v7 2.5 2.9 < 85 < 600 5 -0.09 -0.06 1 < 10 < 50 1 bzx55c3v0 2.8 3.2 < 85 < 600 5 -0.08 -0.05 1 < 4 < 40 1 bzx55c3v3 3.1 3.5 < 85 < 600 5 -0.08 -0.05 1 < 2 < 40 1 bzx55c3v6 3.4 3.8 < 85 < 600 5 -0.08 -0.05 1 < 2 < 40 1 bzx55c3v9 3.7 4.1 < 85 < 600 5 -0.08 -0.05 1 < 2 < 40 1 bzx55c4v3 4 4.6 < 75 < 600 5 -0.06 -0.03 1 < 1 < 20 1 bzx55c4v7 4.4 5 < 60 < 600 5 -0.05 0.02 1 < 0.5 < 10 1 bzx55c5v1 4.8 5.4 < 35 < 550 5 -0.02 0.02 1 < 0.1 < 2 1 bzx55c5v6 5.2 6 <25 < 450 5 -0.05 0.05 1 < 0.1 < 2 1 bzx55c6v2 5.8 6.6 < 10 < 200 5 0.03 0.06 1 < 0.1 < 2 2 bzx55c6v8 6.4 7.2 < 8 < 150 5 0.03 0.07 1 < 0.1 < 2 3 bzx55c7v5 7 7.9 < 7 < 50 5 0.03 0.07 1 < 0.1 < 2 5 bzx55c8v2 7.7 8.7 < 7 < 50 5 0.03 0.08 1 < 0.1 < 2 6.2 bzx55c9v1 8.5 9.6 < 10 < 50 5 0.03 0.09 1 < 0.1 < 2 6.8 bzx55c10 9.4 10.6 < 15 < 70 5 0.03 0.1 1 < 0.1 < 2 7.5 bzx55c11 10.4 11.6 < 20 < 70 5 0.03 0.11 1 < 0.1 < 2 8.2 bzx55c12 11.4 12.7 < 20 < 90 5 0.03 0.11 1 < 0.1 < 2 9.1 bzx55c13 12.4 14.1 < 26 < 110 5 0.03 0.11 1 < 0.1 < 2 10 bzx55c15 13.8 15.6 < 30 < 110 5 0.03 0.11 1 < 0.1 < 2 11 bzx55c16 15.3 17.1 < 40 < 170 5 0.03 0.11 1 < 0.1 < 2 12 bzx55c18 16.8 19.1 < 50 < 170 5 0.03 0.11 1 < 0.1 < 2 13 bzx55c20 18.8 21.2 < 55 < 220 5 0.03 0.11 1 < 0.1 < 2 15 bzx55c22 20.8 23.3 < 55 < 220 5 0.04 0.12 1 < 0.1 < 2 16 bzx55c24 22.8 25.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 18 bzx55c27 25.1 28.9 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 20 bzx55c30 28 32 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 22 bzx55c33 31 35 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 24 bzx55c36 34 38 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 27 bzx55c39 37 41 < 90 < 500 2.5 0.04 0.12 0.5 < 0.1 < 5 30 bzx55c43 40 46 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 < 5 33 bzx55c47 44 50 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 < 5 36 bzx55c51 48 54 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39 bzx55c56 52 60 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43 bzx55c62 58 66 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47 bzx55c68 64 72 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51 bzx55c75 70 79 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56
vishay bzx55..series document number 85604 rev. 2, 12-juni-03 vishay semiconductors www.vishay.com 3 electrical characteristics bzx55b.. 1) tighter tolerances available on request: bzx55a... 1% of v znom , bzx55f... 3% of v znom partnumber zener voltage range 1) dynamic resistance test current temperature coefficient test current reverse leakage current v z @ i zt r zjt @ i zt , f = 1 khz r zjk @ i zk , f = 1 khz i zt tk vz i zk i r @ t amb = 25 c i r @ t amb = 150 c @ v r v ? ma %/k ma a v min max min max bzx55b2v7 2.64 2.76 < 85 < 600 5 -0.09 -0.06 1 < 10 < 50 1 bzx55b3v0 2.94 3.06 < 90 < 600 5 -0.08 -0.05 1 < 4 < 40 1 bzx55b3v3 3.24 3.36 < 90 < 600 5 -0.08 -0.05 1 < 2 < 40 1 bzx55b3v6 3.52 3.68 < 90 < 600 5 -0.08 -0.05 1 < 2 < 40 1 bzx55b3v9 3.82 3.98 < 90 < 600 5 -0.08 -0.05 1 < 2 < 40 1 bzx55b4v3 4.22 4.38 < 90 < 600 5 -0.06 -0.03 1 < 1 < 20 1 bzx55b4v7 4.6 4.8 < 80 < 600 5 -0.05 0.02 1 < 0.5 < 10 1 bzx55b5v1 5 5.2 < 60 < 550 5 -0.02 0.02 1 < 0.1 < 2 1 bzx55b5v6 5.48 5.72 < 40 < 450 5 -0.05 0.05 1 < 0.1 < 2 1 bzx55b6v2 6.08 6.32 < 10 < 200 5 0.03 0.06 1 < 0.1 < 2 2 bzx55b6v8 6.66 6.94 < 8 < 150 5 0.03 0.07 1 < 0.1 < 2 3 bzx55b7v5 7.35 7.65 < 7 < 50 5 0.03 0.07 1 < 0.1 < 2 5 bzx55b8v2 8.04 8.36 < 7 < 50 5 0.03 0.08 1 < 0.1 < 2 6.2 bzx55b9v1 8.92 9.28 < 10 < 50 5 0.03 0.09. 1 < 0.1 < 2 6.8 bzx55b10 9.8 10.2 < 15 < 70 5 0.03 0.1 1 < 0.1 < 2 7.5 bzx55b11 10.78 11.22 < 20 < 70 5 0.03 0.11 1 < 0.1 < 2 8.2 bzx55b12 11.76 12.24 < 20 < 90 5 0.03 0.11 1 < 0.1 < 2 9.1 bzx55b13 12.74 13.26 < 26 < 110 5 0.03 0.11 1 < 0.1 < 2 10 bzx55b15 14.7 15.3 < 30 < 110 5 0.03 0.11 1 < 0.1 < 2 11 bzx55b16 15.7 16.3 < 40 < 170 5 0.03 0.11 1 < 0.1 < 2 12 bzx55b18 17.64 18.36 < 50 < 170 5 0.03 0.11 1 < 0.1 < 2 13 bzx55b20 19.6 20.4 < 55 < 220 5 0.03 0.11 1 < 0.1 < 2 15 bzx55b22 21.55 22.45 < 55 < 220 5 0.04 0.12 1 < 0.1 < 2 16 bzx55b24 23.5 24.5 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 18 bzx55b27 26.4 27.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 20 bzx55b30 29.4 30.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 22 bzx55b33 32.4 33.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 24 bzx55b36 35.3 36.7 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 27 bzx55b39 38.2 39.8 < 90 < 500 2.5 0.04 0.12 0.5 < 0.1 < 5 30 bzx55b43 42.1 43.9 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 < 5 33 bzx55b47 46.1 47.9 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 < 5 36 bzx55b51 50 52 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39 bzx55b56 54.9 57.1 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43 bzx55b62 60.8 63.2 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47 bzx55b68 66.6 69.4 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51 bzx55b75 73 76.5 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56
www.vishay.com 4 document number 85604 rev. 2, 12-juni-03 vishay bzx55..series vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) figure 1. thermal resistance vs. lead length figure 2. total power dissipation vs. ambient temperature figure 3. typical change of working voltage under operating conditions at t amb =25c 95 961 1 0 5 10 15 0 100 200 300 400 500 20 r ?therm.resist.junction/ ambient ( k/w) thja l ? lead length ( mm ) ll t l =constant 0 40 80 120 160 0 100 300 400 500 600 p ?total power dissipation ( mw) tot t amb ? ambient t emperature(c ) 200 95 9602 200 0 5 10 15 20 1 10 100 1000 v ?voltagechange( mv ) z v z ? z-voltag e(v) 25 95 9598 i z =5ma t j =25c figure 4. typical change of working voltage vs. junction temperature figure 5. temperature coefficient of vz vs. z-voltage figure 6. diode capacitance vs. z-voltage ?60 0 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 v ? relative voltagechange ztn t j ? junction temperature (c ) 240 95 9599 v ztn =v zt /v z (25c) tk vz =10 x 10 ?4 /k 8x10 ?4 /k ?4 x 10 ?4 /k 6x10 ?4 /k 4x10 ?4 /k 2x10 ?4 /k ?2 x 10 ?4 /k 0 0102030 ?5 0 5 10 15 tk ?temperature coefficient of v ( 10 /k) vz v z ? z-voltag e(v) 50 95 9600 40 z ?4 i z =5ma 0 5 10 15 0 50 100 150 200 c ? diode capacitance ( pf ) d v z ? z-voltag e(v) 25 95 9601 20 t j =25c v r =2v
vishay bzx55..series document number 85604 rev. 2, 12-juni-03 vishay semiconductors www.vishay.com 5 figure 7. forward current vs. forward voltage figure 8. z-current vs. z-voltage 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i ? forward current ( ma) f v f ? forward voltag e(v) t j =25c 04 81216 20 95 9604 0 20 40 60 80 100 i ? z-current ( ma) z v z ? z-voltag e(v) p tot =500mw t amb =25c figure 9. z-current vs. z-voltage figure 10. differential z-resistance vs. z-voltage 15 20 25 30 0 10 20 30 40 50 i ? z-current ( ma) z v z ? z-voltag e(v) 35 95 9607 p tot =500mw t amb =25c 0 5 10 15 20 1 10 100 1000 r ? differential z-resistance ( ? ) z v z ? z-voltag e(v) 25 95 9606 t j =25c i z =1ma 5ma 10ma 1 10 100 1000 z ?thermalresistance for pulsecond.(k/w ) thp t p ? pulse length ( ms ) 95 9603 10 ?1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse r thja =300k/w t=t jmax ?t amb i zm =(?v z +(v z 2 +4r zj t/z thp ) 1/2 )/(2r zj ) x figure 11. thermal response
www.vishay.com 6 document number 85604 rev. 2, 12-juni-03 vishay bzx55..series vishay semiconductors package dimensions in mm cathode identification ? 1.7 max. ? 0.55 max. 3.9 max. 26 min. technical drawings according to din specifications 94 9366 standard glass case 54 a 2 din 41880 jedec do 35 weight max. 0.3g 26 min.
vishay bzx55..series document number 85604 rev. 2, 12-juni-03 vishay semiconductors www.vishay.com 7 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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